| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element which inhibits diffusion of Al to improve an optical output despite utilizing a cover electrode structure using Al.SOLUTION: A semiconductor light emitting element comprises: an Ag-containing first electrode structure 20; and a second electrode structure 30 arranged on a top face and a lateral face of the first electrode structure 20. The second electrode structure 30 is composed of metal consisting chiefly of Al and the second electrode structure 30 is formed in a manner such that a thickness of a film covering the lateral face of the first electrode structure 20 is thicker than a thickness of a film covering the top face. This can improve light extraction efficiency despite preventing diffusion of Al. In the first electrode structure 20, an Ni layer and a Ti layer are sequentially laminated between an Ag-containing layer 24 and an Ru layer 22. Further, the second electrode structure 30 is composed of Al.SELECTED DRAWING: Figure 2 |
