发明名称 |
Method and apparatus for laser zone melting |
摘要 |
A method for laser zone melting and apparatuses therefor wherein, in a zone melting method for a thin film due to the irradiation of laser beam, the laser beam is vibrated at the frequency of more than 1 Hz in the direction substantially perpendicular to the moving direction of a melting zone and the fluctuation of laser beam output is controlled to less than 1%. The zone-melted thin films manufactured by this method have good electrical properties resulting from less crystal imperfection, less non-stoichiometric excess atoms of the constituents, and less thickness corrugation of the film due to the suppression of temperature fluctuations and its spacial inhomogeneity at the time of zone melting.
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申请公布号 |
US4177372(A) |
申请公布日期 |
1979.12.04 |
申请号 |
US19770799928 |
申请日期 |
1977.05.24 |
申请人 |
HITACHI LTD |
发明人 |
KOTERA, NOBUO;NISHIDA, TAKASHI;OI, TETSU |
分类号 |
C30B13/00;C30B13/24;C30B13/28;C30B29/40;H01L21/208;H01L21/268;H01L43/12;H01S3/131;(IPC1-7):B23K9/00 |
主分类号 |
C30B13/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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