| 摘要 |
<p>PURPOSE:To do away with a film carrier to have only one process of bonding by protruding toward a chip placing area one side of Ni coated layer on a plate without a core. CONSTITUTION:Photoresist masks 2, 2' are coated except the surface area remaining after the patterning of copper or copper alloy plate 1. Next, Ni plating layers 3, 3' are formed on a bare surface of the plate 1. In this case, the resist film 2' has been formed so that the Ni plating layer 3' is to have an inside-extending area 3'' compared with the other plating layer 3. Next, resist 2, 2' are removed and the bare area of the plate 1 is removed with Ni plating layers 3, 3' as masks. Next, Sn or Au layer 4 is coated on Ni plating layers 3, 3' to form a lead frame 5. And, a chip 7 is placed into a chip placing area 6 with Ni plating layer 3'' protruding, and heat pressure is applied through a bump 8. This lead frame 5 does not need a film carrier and make the process to be a bonding one only.</p> |
