发明名称 |
Double crucible crystal growing apparatus |
摘要 |
The disclosure is directed to a double crucible Czochralski crystal semiconductor growing apparatus (10). An inner crucible (14) floats in a melt within an outer crucible (13) and a single crystal semiconductor billet (23) is pulled from the melt (16) in the inner crucible. An elongated tubular member (26), having at least one small aperture (33) in the wall thereof, provides a channel between the outer and inner crucibles. The tubular member (26) permits flow of the melt in the outer crucible (14) to the inner crucible (13) while inhibiting the diffusion of dopant material from the inner to outer crucible while any gas in the member will pass through the aperture (33).
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申请公布号 |
US4190631(A) |
申请公布日期 |
1980.02.26 |
申请号 |
US19780944454 |
申请日期 |
1978.09.21 |
申请人 |
WESTERN ELECTRIC CO INC |
发明人 |
DEWEES, THOMAS J;FANGMAN, JOHN S;LIN, WEN |
分类号 |
C30B15/12;(IPC1-7):B01J17/18 |
主分类号 |
C30B15/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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