发明名称 Piezoelectric crystalline film of zinc oxide and method for making same
摘要 Piezoelectric crystalline film on a substrate, which is a crystalline zinc oxide film with a c-axis substantially perpendicular to the substrate surface, the crystalline zinc oxide film containing, as an additive or additives, at least one element selected from the group of sulphur, selenium and tellurium. The piezoelectric crystalline films have high resistivity and a smooth surface, and make it possible to produce piezoelectric transducers with goal conversion efficiency. The piezoelectric crystalline films are made by sputtering zinc oxide and an additive onto a substrate from a film material source consisting essentially of a ceramic of zinc oxide containing at least one element of the group consisting of sulphur, selenium and tellurium.
申请公布号 US4219608(A) 申请公布日期 1980.08.26
申请号 US19780942278 申请日期 1978.09.14
申请人 MURATA MANUFACTURING CO LTD 发明人 MASHIO, TASUKU;NISHIYAMA, HIROSHI;OGAWA, TOSHIO
分类号 H01L41/18;H01L41/22;H01L41/316;(IPC1-7):C23C15/00;C04B35/00 主分类号 H01L41/18
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