| 摘要 |
PURPOSE:To prevent crack at the neck of an electrode in a semiconductor device upon connection of wries by eliminating P-As film on a leading electrode in the vicinity of an injection pad. CONSTITUTION:No P-As films 7, 8 are coated on electrodes 3, 5 in the vicinity of junction pads 4, 6, and the electrodes are spaced at an interval l>20mu. According to this configuration since no crack occurs at the electrodes 3, 5 by the stress applied to the pads 4, 6 when wires are connected, electrodes are not opened to improve the reliability. |
