| 摘要 |
PURPOSE:To prevent disconnection of wires on a semiconductor device by forming shallow separating layer groove on reduced pressure epitaxially grown layer on a p-type substrate having an n<+>-type buried layer. CONSTITUTION:A thin n-type epitaxial layer 12 is formed by means of reduced pressure epitaxially growing process on a p-type silicon substrate 11 provided selectively with an n<+>-type buried layer. With an oxide film 13 as a mask the n-type layer 12 is selectively etched to retain thin layer 12 on the bottom of the groove. Then, an opening is selectively formed at the oxide film 13 to diffuse B in shallow depth and to simultaneously form an isolation region 14 reaching the subsrate 11, a base layer 17 and a resistance layer 15. Then, an emitter layer 18 and a collector layer 19 are provided as ordinal method, and aluminum electrode wire layer 16 is provided thereon. With such a structure the buried layer is not dispersed to the layer 12 to form the thin layer 12. Thus, the shallow groove may be enough to result in no disconnection of the wires on the groove. |
