FABRICATION OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To prevent disconnection of a wire in a semiconductor device by selectively coating the recess of the surface of a semiconductor substrate with alumina thin film and then laminating an insulating film by means of a CVD process. CONSTITUTION:A polysilicon wire 13 is provided through an SiO2 film 12 on a silicon substrate 11. After an alumina thin film 14 is selectively formed on the recess among the wires, an SiO2 film 15 is formed by means of a CVD process to form flat surface thereon. Subsequently, connecting holes 17 are etched by employing resistmask 16. Then, the mask is removed to provide aluminum or polysilicon second wiring layer 18 thereon. Thus, the insulating film formed on the substrate is formed flat from rugged surface to prevent disconnection of wires exactly due to ruggedness of the wiring film provided thereon.