| 摘要 |
PURPOSE:To dispense with providing a margin between a separating region and an internal unit, by interposing a porous semiconductor oxide between a semiconductor substrate of one electroconductive type and a layer of the inverse electroconductive type when epitaxially growing the layer over the substrate and by making the region for separating the epitaxial layer as an island, of porous semiconductor oxide. CONSTITUTION:A porous semiconductor oxide layer 5' is produced on the surface of a p-type Si substrate 5. A prescribed number of n<+>-type buried regions 9 are provided on the layer 5' if necessary. An N-type layer 4 is then epitaxially grown on the entire surface of the layer 5' and the buried regions 9. The layer 4 is separated as islands so that tye contain the regions 9. At that time, separating regions 16, 17 are made of a porous semiconductor oxide so that the regions 16, 17 are vertically integrated with each other beside the insular layers 4. A p-type base region 2 and an N-type emitter region 1 are produced by diffusion in one insular region 4 so that the emitter region is located in the base region. An N<->-type collector electrode lead region 3 is also produced by diffusion in the insular region 4. A p-type resistance region 8 is provided in the other insular region 4. |
