发明名称 PPN HETERO JUNCTION TYPE SOLAR BATTERY
摘要 PURPOSE:To readily obtain a solar battery by forming a chain polyacetylene thin film having conjugated double bond chain having a thickness of less than 10mum on a transparent conductive film, treating it with electron attracting compound to form an n-type thin film, and pressure bonding the n-type thin film onto a p-type semiconductor to form a p-n hetero junction. CONSTITUTION:A chain polyacetylene thin film 2 having conjugated double bond chain having a thickness of less than 10mum is formed on a polyester film 1 side coated with a transparent conductive film 1 such as In2O3 or the like on one surface. Then, this film 2 is treated with Na-naphthalene to form an n-type thin film, and a p-type silicon plate 3 is pressure bonded thereonto to form a p-n hetero junction. Thereafter, an ohmic electrode 4 is coated on the entire exposed surface of the plate 3, and lead wires are attached to the electrode 4 and the film 1. In this manner, a solar battery can be easily obtained, and incorporate approx. 0.4v of open terminal voltage, approx. 6mA of shorting current, and approx 1% of conversion efficiency, and the like.
申请公布号 JPS55154780(A) 申请公布日期 1980.12.02
申请号 JP19790062238 申请日期 1979.05.22
申请人 SHOWA DENKO KK 发明人 IKEDA SAKUJI;SHIRAKAWA HIDEKI;KOBAYASHI MASAO
分类号 H01L51/42;H01L21/34;H01L31/04 主分类号 H01L51/42
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