发明名称 TRANSFER MASK FOR XXRAY EXPOSURE AND ITS PRODUCTION
摘要 PURPOSE:To enable the formation of a soft X-ray absorbing layer with high accuracy and eliminate its damaging owing to physical contact by providing the soft X-ray absorbing layer within a soft X-ray transmission layer. CONSTITUTION:An epitaxial layer is grown on a silicon substrate 4 of plane bearings (1, 0, 0) to form a soft X-ray transmission layer 2. A thermal oxide film is deposited on the back side of the substrate 4 and an etching mask pattern 5 for forming supports 3 is formed. Next, resist is coated on the transmission layer and after a resist pattern 6 is formed, ions of boron or the like are implanted to harden the resist and plasma-etch part of the transmission layer 2. Next, the portions on the resist pattern 6' are annealed, after which a soft X-ray absorbing metal 7 is deposited. Next, the pattern 6' is removed, by which the soft X-ray absorbing layer 1 is formed as a pattern in the etched portions of the soft X-ray transmission layer 2. Further, the substrate 4 is etched by using the etching mask pattern 5 on the substrate 4, whereby the supports 3 are formed.
申请公布号 JPS565545(A) 申请公布日期 1981.01.21
申请号 JP19790082306 申请日期 1979.06.27
申请人 MITSUBISHI ELECTRIC CORP 发明人 TANAKA KAZUHIRO
分类号 G03F1/00;G03F1/22;G03F1/68;G03F1/80;H01L21/027;H01L21/30 主分类号 G03F1/00
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