| 摘要 |
PURPOSE:To accurately align a main pattern with a main buried layer in a semiconductor device by displacing only an auxiliary aligning pattern beforehand for an auxiliary buried layer at predetermined distance in the same direction with respect to the other element pattern. CONSTITUTION:When pattern 7, 7' for a buried layer are aligned in the next step through an epitaxial layer, a pattern which is displaced by a distance DELTAx=kXtepi in the same direction as the direction of b of an aligning pattern 7' shown beforehand for a buried layer 1' with respect to the other element pattern is employed, where tepi represents the thickness of an epitaxial layer, and k represents approx. 0.5-1.0. When the buried layer pattern 2' on the surface of the epitaxial layer is merely accurately aligned in this manner with the aligning pattern 7', the buried layer 1 can be accurately aligned with the other pattern 7. |
