发明名称 MEMORY UNIT, MEMORY AND CONTROL METHOD FOR THE MEMORY UNIT
摘要 Embodiments of the present invention disclose a storage unit, a memory, and a method for controlling a storage unit, to increase storage density, and reduce power consumption and production costs. The storage unit includes: a comb-shaped magnetic track, a first drive circuit, a second drive circuit, a first drive port, and a second drive port, where the comb-shaped magnetic track includes a first storage area, a second storage area, and a comb handle, and the first storage area and the second storage area include more than two memory bars; by controlling input voltages of a first port, a second port, the first drive port, and the second drive port and driving the first drive circuit, a current pulse is generated in a memory bar in the first storage area, and a magnetic domain is driven to move; and by controlling the input voltages of the first port, the second port, the first drive port, and the second drive port and driving the second drive circuit, a current pulse is generated in a memory bar in the second storage area, and a magnetic domain is driven to move.
申请公布号 EP3048611(A4) 申请公布日期 2016.10.19
申请号 EP20140856459 申请日期 2014.10.21
申请人 HUAWEI TECHNOLOGIES CO., LTD. 发明人 LIN, YINYIN;WEI, ZHULIN;ZHAO, JUNFENG;YANG, WEI;FU, YARONG;YANG, KAI
分类号 G11C11/02;G11C11/15;G11C19/08 主分类号 G11C11/02
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