| 摘要 |
PURPOSE:To form vapor deposited layer as thin as monomolecular layer or monoatomic layer, by varying the evaporation and flying speed of evaporating material relatively with the moving speed of the material to be deposited. CONSTITUTION:When the holding stand 1 is rotated in the direction of A at a speed the same as, or higher than, the evaporating and flying speed of evaporating material 12, the evaporating material 12 hardly deposits on the material to be deposited 11, however when the holding stand 1 is rotated at a lower speed than the evaporating and flying speed, the evaporating material 12 deposits on the material 11 to be deposited. Becauses the stand 1 is rotated at ultra-high speed, very small amount of the material 12 is deposited to form extremely thin vapor deposited film. In contrary, when the stand 1 is rotated in the direction of B, the material having hardly vapor deposited formerly deposits to form thick vapor deposited film because the evaporated material 12 colides with the surface of the material 11 to be deposited at a ultra-high speed. |
