发明名称 Group III-V/zinc chalcogenide alloyed semiconductor quantum dots
摘要 A scalable method for the manufacture of narrow, bright, monodisperse, photo-luminescent quantum dots prepared in the presence of a Group II-VI molecular seeding cluster fabricated in situ from a zinc salt and a thiol or selenol compound. Exemplary quantum dots have a core containing indium, phosphorus, zinc and either sulfur or selenium.
申请公布号 US9478700(B2) 申请公布日期 2016.10.25
申请号 US201414209603 申请日期 2014.03.13
申请人 Nanoco Technologies Ltd. 发明人 Daniels Steven;Harris James;Glarvey Paul;Orchard Katherine;Narayanaswamy Arun
分类号 H01L33/06;C09K11/70;C09K11/02 主分类号 H01L33/06
代理机构 Blank Rome LLP 代理人 Blank Rome LLP
主权项 1. A method of forming a quantum dot (QD), the method comprising: reacting a group III precursor with a group V precursor to form a semiconductor core in the presence of a molecular cluster compound, the molecular cluster compound formed in situ by the reaction of a zinc precursor and a chalcogen precursor, wherein the zinc precursor is any one of zinc acetate and zinc stearate,the chalcogen precursor is any one of 1-dodecanethiol, thiophenol, and 1-octane selenol, andthe group III precursor, the zinc precursor and the chalcogen precursor are present in a single reaction vessel prior to the in situ formation of the molecular cluster compound, and whereinthe reacting of the group III precursor with the group V precursor comprises: heating a mixture comprising the group III precursor, the group V precursor, the zinc precursor and the chalcogen precursor at a first temperature sufficient to dissolve the group III precursor, the group V precursor, the zinc precursor and the chalcogen precursor, andheating the mixture to a second temperature sufficient to initiate growth of the QD.
地址 Manchester GB