Method for forming semiconductor device structure

摘要

Methods for forming a semiconductor device structure are provided. The method includes providing a substrate and forming an isolation structure in the substrate. The method also includes forming a gate stack structure on the substrate and etching a portion of the substrate to form a recess in the substrate, and the recess is adjacent to the gate stack structure. The method includes forming a stressor layer in the recess, and a portion of the stressor layer is grown along the (311) and (111) crystal orientations.

主权项

1. A method for forming a semiconductor device structure, comprising: providing a substrate; forming an isolation structure in the substrate; forming a gate stack structure on the substrate; etching a portion of the substrate to form a recess in the substrate, wherein the recess is adjacent to the gate stack structure; forming a stressor layer in the recess, wherein a portion of the stressor layer is grown along the (311) and (111) crystal orientations; forming a capping layer on the stressor layer along the (311) and (111) crystal orientations; and forming a metal silicide layer over the capping layer, wherein a portion of the metal silicide layer is below a top surface of the isolation structure.