Semiconductor device and method of manufacturing the same

摘要

Dishing of a plate of a capacitor is suppressed in a structure where the top of the plate is flush with a top of an interconnection. Double interlayer dielectric films are used to form a first recess and a second recess. The second recess has an opening on the bottom of the first recess. The first and second recesses are used to form a capacitor. The lower electrode of the capacitor has a bottom part along the bottom of the first recess. The lower electrode further includes a sidewall part having an upper end that projects along a side face of the second recess from the opening of the second recess up to a position between the opening of the second recess and a top of the upper interlayer dielectric film (the upper one of the double interlayer dielectric films).

主权项

1. A semiconductor device, comprising:
a substrate; a first transistor provided in the substrate; a second transistor provided in the substrate; a first interlayer dielectric film located over the substrate; a second interlayer dielectric film located over the first interlayer dielectric film; a first recess having an opening in a surface of the second interlayer dielectric film and a bottom on the first interlayer dielectric film; a second recess that has an opening at the bottom of the first recess, and is at least partially located in the first interlayer dielectric film; a capacitor that is formed using the first recess and the second recess, and is electrically coupled to one of a source and a drain of the first transistor; and a conductive member that is formed in the second interlayer dielectric film, and is electrically coupled to one of a source and a drain of the second transistor, the capacitor including: a lower electrode having a bottom part along a bottom of the second recess, and a sidewall part along a side face of the second recess, the sidewall part having an upper end portion that projects from the opening of the second recess to a position that is between the opening of the second recess and a top of the second interlayer dielectric film, a capacitive dielectric film covering the bottom part of the lower electrode and an inner wall of the sidewall part of the lower electrode, and covering an outer wall of a portion of the sidewall part, the portion projecting from the opening of the second recess, an upper electrode covering the capacitive dielectric film, and a conductive plate located over the upper electrode, a top of the conductive plate being flush with a top of the conductive member.