| 摘要 |
PURPOSE:To easily form a steep-sloped diffusion front by a method wherein ZnVb2 or Zn3, CdVb2 or Cd3Vb2 and a crystal grains having the same component as IIIb-Vb semiconductor are sealed in a quartz tube. CONSTITUTION:When P-type impurities are diffused on a IIIb-Vb group compound semiconductor such as an N-type InP, for example, an InP polycrystalline fine particles, a Zn3P2 and a d3P2 are vacuum-sealed into a quartz ample together with a substrate crystal, they are maintained in a heated condition and then a quenching is performed. As a result, a steep-sloped P-N junction interface is formed with a diffusion front 9 of zinc and a diffusion front 10 of cadmium overlapping each other. The characteristics of a tunnel diode, a PIN diode and an avalanche photo diode can be improved using the above steep-sloped P-N junction. |
