| 摘要 |
PURPOSE:To make unnecessary the gain adjustment circuit and sample hole circuit and to simplify the constitution, by adding and detecting the charges from p channel and n channel charge transfer type multistage delay line. CONSTITUTION:The charge injected to the N region 205 of p type silicon substrate 201 according to the signal is transferred with delay with the complementary type input and transfer gates 206, 207...208, 209... and after the storage, it is output from the floating diffusion layer 211 via the output gate 210. On the other hand, the delayed transfer charge output from the floating diffusion layer 11' of the charge transfer type multistage delay line with similarity provided at the island shape n type region 202 in the substrate 201 is added at the addition node N1 and detected. With the system adding and detecting the result of transfer taking one as holes and another as electrons, the gain adjustment circuit and sample hold circuit are made unnecessary. Accordingly, the constitution of the charge transfer type analog operation unit is made simple. |
