PATTERN FORMING MATERIAL

摘要

PURPOSE:To obtain a material forming the pattern of a circuit such as an integrated circuit and having high sensitivity and high resolution by using a copolymer contg. a specified percentage of tert-butyl methacrylate units as a resist material against deep ultraviolet rays. CONSTITUTION:A copolymer contg. 20-95% tert-butyl methacrylate units represented by formula I is used as a resist material. This copolymer is represented by formula II. This resist is fit for lithography with deep ultraviolet rays of 180- 350nm wavelengths and has superior resolution and sensitivity with a small quantity of exposure in the formation of a <=1mu minute pattern.