| 摘要 |
PURPOSE:To prevent the exfoliation of the metal film of the subject device by a method wherein an SiO2 film is provided on an Si substrate, and a Cr film, Cu film, etc. are provided successively on the region from the aperture section to the oxide film, on which an AU protruded electrode is provided and a Cu lead with an Sn film is attached. CONSTITUTION:An SiO22 is provided on an Si substrate 1, a bimetal layer consisting of the first layer of a Cl film 3 and the second layer of a Cu or an Ni film 4 are formed, an Au protruded electrode 5 is provided on the above bimetal layer and a Cu lead 6 having an Sn film 6' is connected. When the thickness of the oxide film 2 is less then 1.0mum, the thickness of the second layer metal 4 is to be more than 1.5X(thickness of oxide film)+3mum, and when the thickness of the former is more than 1.0mum, the thickness of the latter is to be more than 1.5X(thickness of oxide film). Hence, the exfoliation of the metal projection and the cracks on the oxide film are prevented and an excellent wireless bonding can be performed. |
