| 摘要 |
PURPOSE:To enable the measurement of the two-dimensional distribution of radiant rays by forming front and back surface electrodes independently on a semiconductor substrate and thus forming a plurality of radiation detecting elements. CONSTITUTION:A thin silicon oxide film 12 is formed on the surface of the N type silicon substrate 11, and polyurethane resin insularing films 13, 14 are covered on both the front surface and the back surface of the substrate. Holes disposed in two- dimension are formed at the positions confronting between the films 13 and 14, thereafter back surface electrode 16 contacting the substrate 11 and the front surface electrode 16 contacting the silicon oxide film are formed at the holes, and a plurality of radiation detecting elements of MIS diode is formed. Since the front and back surface electrodes 15, 16 are independently formed for the respective detecting elements, the electrodes operate as independent detecting elements, and two-dimensional distribution can be thus measured in the radiant rays. |
