| 摘要 |
PURPOSE:To easily control the thickness of an insulating thin film of a tunnel type Josephson junction and the forming range by a method wherein a narrowly throttled laser beam is irradiated upon a micro area on an ultra conduction thin film in an oxidized atmosphere to form an insulating thin film. CONSTITUTION:Within a vacuum chamber, the 1st superconduction thin film 1 and a laser light source 2 are installed. And when a narrowly throttled laser beam 3 is irradiated from the light source 2 upon a micro area wherein a junction of the ultra conduction thin film 1 is to be obtained, and at the same time, a micro quantity of an oxidized gas 4 is injected into the vacuum chamber, the temperature of the irradiated part is raised and an oxide thin film 5 is formed. And further, the 2nd superconduction thin film is formed on the oxide film 5 by means of a method, for example, a photolithography and a Josephson junction is obtained. Here, the thickness of an oxide film can be controlled by the power density control of a laser beam and the forming range is controlled by a beam scanning in a respectively required specifications. |
