| 摘要 |
PURPOSE:To enhance the assembling workability and improve the high frequency properties of the transistor element by mounting source and gate electrodes in a flip- chip type. CONSTITUTION:A ceramic substrate 2 provided with source and drain bonding areas 5 and 3 is formed on a heat dissipating conductor 48 having a gate bonding area 4, and a package is formed in this manner. The source and gate electrodes of a V-FET chip 1 are connected to the bonding areas 4, 5 of the package in a flip- chip type, and the drain electrode is connected to the bonding area 3 by a wire 6. |
