| 摘要 |
PURPOSE:To prevent the stepwise breakdown of a wiring film in a semiconductor device by opening a contact hole at an insulating film on the surface of a semiconductor substrate thereby exposing predetermined part of the substrate, accumulating Si while irradiating energy beam through the hole and providing an electrode wiring film thereon. CONSTITUTION:After forming a field insulating film 2, a gate insulating film 3, polysilicon gate electrode 4, and source 5, drain 6 on an Si wafer 1, a CVD SiO2 film 7 is coated thereon. A contact hole is opened at the film 7, thereby exposing predetermined parts 5, 6, Si is accmulated in the hole while irradiating laser beam to the entire wafer surface thereby forming Si layers 9, 9' thereon, subsequently aluminum electrode wiring films 10, 10' are formed thereon, and are electrically connected to the source 5 and the drain 6 respectively. Since this can smooth it, it can prevent the stepwise breakdown of the aluminum wire film and can also eliminate the punch-through of the aluminum at the time of sintering. |
