| 摘要 |
PURPOSE:To facilitate the anodization of a silicon nitride film and a microminiature formation thereof by implanting ions only on a partial region of the silicon nitride film and selectively anodizing only the silicon nitride film containing ions. CONSTITUTION:An SiO2 film 102, the first metal thin film 103 and a silicon nitride film 104 are sequentially formed on an Si substrate 101, ions of P or the like is implanted selectively on the film 104, and thereafter only the implanted region is converted into an anodized film 108 by anodization. This can facilitate the selective anodization of the silicon nitride film. Since the etching speed is high in the anodized film, it can be removed by etching, thereby facilitating the formation of microminiature pattern of the silicon nitride film. |
