发明名称 JIG FOR TREATMENT OF SEMICONDUCTOR
摘要 PURPOSE:To simplify putting in and taking out of water by a method wherein in a jig for performing diffusion or oxidation treatment to silicon wafer and the like, a part of a parallel supporting rack connecting with wafer is not provided with grooves and leaving it longitudinally in a smooth state. CONSTITUTION:When making a jig for treatment supporting many sheets of silicon wafer using quartz glas, silicon, silicon carbide and such, the opposing supporting racks 1 and 2 are used to form it in the frame shape. The racks 1 and 2 are provided with grooves cut-in respectively at intervals, a part of the periphery of wafer is put therein to keep wafer standing. In this constitution, the rack 1 or 2 is provided with at least one spot having no groove and this spot is left longitudinally in a smooth state. In this way the wafer can be easily put in and taken out wihtout causing any defect or crack in the pheripheral part of wafer.
申请公布号 JPS5690526(A) 申请公布日期 1981.07.22
申请号 JP19790167879 申请日期 1979.12.24
申请人 TOSHIBA CERAMICS CO 发明人 INOUE YOSHIO;MASUDA NORIO;KON TAMIO;SASAKI YASUMI
分类号 H01L21/31;C30B31/14;H01L21/22 主分类号 H01L21/31
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