摘要 |
An embodiment includes an apparatus comprising: a non-planar fin having first, second, and third portions each having major and minor axes and each being monolithic with each other; wherein (a) the major axes of the first, second, and third portions are parallel with each other, (b) the major axes of the first and second portions are non-collinear with each other, (c) each of the first, second, and third portions include a node of a transistor selected from the group comprising source, drain, and channel, (e) the first, second, and third portions comprise at least one finFET. Other embodiments are described herein. |
申请人 |
INTEL CORPORATION |
发明人 |
DIAS, NEVILLE L.;JAN, CHIA-HONG;HAFEZ, WALID M.;OLAC-VAW, ROMAN W.;CHANG, HSU-YU;CHANG, TING;RAMASWAMY, RAHUL;LIU, PEI-CHI |