| 摘要 |
PURPOSE:To obtain a photoelectric transducer of high efficiency and reliability by piling two kinds of thin films each having given refractive index and film thickness on the surface on which light is made incident. CONSTITUTION:On N type GaAs 1, P type GaAs 2 and P type Ga1-XAlXAs 4 are piled. Then, (a) film 8, e.g., Si3N4, of refractive index 1.8-2.5 and thickness 600-900Angstrom and a film 9, e.g., SiO2, of refractive index less than 1.5 and thickness more than 5,000Angstrom are piled thereon to constitute a solar cell. Thereby, the film 9 prevents the reflection of the incident rays and the film 8 prevents the invasion of moisture, so that it is possible to obtain a device of high efficiency and reliability. |
