| 摘要 |
<p>PURPOSE:To measure accurately a squeezing resistance in a semiconductor device by forming a high impurity density region on the surface of the region between which the squeezing resistor is interposed to form a pattern for leading an electrode and forming a plurality of squeezing resistance patterns in parallel with each other. CONSTITUTION:The other conductivity type resistance region 33 is formed on one conductivity type substrate 31, and one conductivity type surface region 35 is formed on the surface thereof. A pattern C for retaining the potential of the substrate 31 at a predetermined potential and two test patterns A, B having different shapes of the resistance region under the surface region 35 are formed. The pattern A is a pattern for measuring the squeezing resistance with a ratio of the width to the length as 1:1, and the pattern B is a pattern of measuring the squeezing resistance with a ration of the width to the length as 2:1.</p> |
