| 摘要 |
PURPOSE:To prevent the shortcircuit between electrodes and breakdown of the junction of a diffused layer by employing a conductive film having high heat resistance and low migration for a contact window end of the part for generating a current concentration. CONSTITUTION:A reverse conductivity type diffused layer 10 is formed on a silicon semiconductor substrate 9, and a contact window 12 is opened at a part of an SiO2 film 11 formed on the surface of the substrate 9. Subsequently, an Mo film 13 having preferable heat resistance is so formed as to cover the window 12. Thereafter, the film 13 is so removed as to completely cover the contact window end 14 of the side in the vicinity of the diffused layer in which a current flows and to partly expose the contact surface. Eventually, the wires and the electrode pattern of aluminum or aluminum/silicon film 15 are formed. |
