| 摘要 |
<p>1. Floating-gate storage cell consisting of an n-channel field-effect transistor whose potentially floating gate electrode comprises a first electrode part which, for effecting the tunnel injections of electrons into the gate electrode (1), is coupled capacitively to a writing electrode (4), as well as a second electrode part of polycrystalline silicon which, for effecting the tunnel emissions of electrons from said gate electrode (1) during the erasing operation, is coupled capacitively to an erasing electrode (3), characterized in that moreover said gate electrode (1) is coupled capacitively to a programming electrode (2), that said writing electrode (4) is connected directly in a barrier-free contact to the drain zone (5) of the field-effect transistor, and that the coupling capacitance of said programming electrode (2) towards said gate electrode (1) is greater than that of said writing electrode (4) towards said gate electrode (1) and greater than that of said erasing electode (3) towards said gate electrode (1).</p> |
