| 摘要 |
PURPOSE:To form a capacitor having large capacity with small area by laminating a plurality of conductive layers sequentially through insulating layers on the surface of a semiconductor substrate and suitably connecting the layers. CONSTITUTION:A thin gate oxide film 112 having a thickness of approx 1,000Angstrom is formed on a p type semiconductor substrate 111, and a polycrystalline silicon layer 113 is formed thereon. Further, an oxide film having a thickness of approx. 1,500Angstrom and a polycrystalline silicon layer 118 are formed thereon. An n<+> type region 115 is so formed on the surface of the substrate 111 as to surround the layer 113 in such a manner that an inversion layer 114 may be induced at the opposed part of the layer 113. The layer 118 is connected to the region 115 with a contacting surface 119, and the first and the second capacitors are formed between the layers 114 and 113 and between the layers 113 and 118. |
