| 摘要 |
PURPOSE:To reduce the power consumption of a solid image pickup device, by providing an impurity layer, separated electrically from the substrate on the substrate surface of a photosensitive cell part. CONSTITUTION:In a case of to use electrons as signal charge by using p type semiconductor substrate 11, n type layer 19 is provided as the 1st impurity layer on the surface of substrate 11 at a photosensitive cell part and p type layer 20 is provided as the 2nd impurity layer on its surface. Consequently, p type layer 20 of the photosensitive cell can be applied with a negative potential independently of substrate 11. Therefore, need to apply a high positive voltage to transfer electrode 16 is eliminated and need to raise the drain voltage of the output transistor is also eliminated, so that the power consumption is reduced. |
