| 摘要 |
PURPOSE:To obtain a semiconductor device which has a large gain and output and is stable in operation by directly connecting the input electrodes of a plurality of transistors connected in parallel. CONSTITUTION:A single conductor 27 is provided to directly connect base-leading electrodes 12 and 13 as the input terminals of unit transistors. By said constitution, an inductance 28 is connected between the bases of respective transistors. Because the distance between respective unit transistors is small, and the value of said inductance 28 is extremely small, the input base potentials of unit transistors 21 and 22 can be regarded as approximately the same in respect to high frequency. Accordingly, the parallel operation is compensated, and the gain and output are prevented from lowering. |
