| 摘要 |
PURPOSE:To form a diffused layer in only a single photoengraving process and eliminate the need for the mask alignment process, by a method wherein a polycrystalline silicon film and a silicon nitride film are selectively formed on a silicon wafer, and a selective oxidation is performed by using the nitride film as a mask. CONSTITUTION:On a silicon wafer 11, a polycrystalline silicon film 12 and a silicon nitride film 13 are laminatedly formed. Then, with a silicon nitride film 13a left, the other nitride film is removed by means of photoengraving. Then, by using the silicon nitride film 13a as a mask, a selective oxidiation is performed to form a silicon oxide film 15, and the silicon nitride film 13a is removed thereafter. Then, phosphorous is diffused from an opening 14 to form a diffused layer 66. Thereby, manufacture can be performed in only a single photoengraving process, and the time and labor needed for the mask alignment process can be eliminated. Accordingly, the whole process can be simplified. |
