发明名称 微細構造体の製造方法
摘要 PROBLEM TO BE SOLVED: To provide a production method of a microstructure, which includes a step of forming a photoresist pattern and which enables formation of a photoresist pattern having a pointed portion in a sharper profile with high pattern accuracy without increasing an exposure frequency.SOLUTION: A photoresist pattern including a projection 22A having a pointed portion 22X is formed by applying a positive photoresist 21 on a substrate 10, scanning the photoresist 21 with a laser beam while modulating the beam intensity to expose the photoresist 21, and developing the photoresist 21. The application and exposure of the photoresist 21 are carried out in such a manner that a depth D from the surface of the photoresist 21 to a peak 22XT of the pointed portion 22X to be formed after the development is half or less than half of a film thickness T of the photoresist 21.
申请公布号 JP6054698(B2) 申请公布日期 2016.12.27
申请号 JP20120219441 申请日期 2012.10.01
申请人 株式会社クラレ 发明人 渡邉 淳史;唐井 賢;籠谷 隆一;石田 浩司
分类号 H01L21/027;B29C59/02 主分类号 H01L21/027
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