| 摘要 |
PURPOSE:To form monolithically a Darlington transistor improved in switching characteristic by integrating a Schottky barrier diode. CONSTITUTION:Boron is diffused in one surface of an N type silicon wafer 1 to form a P type base region 2, phosphorus or the like is selectively diffused to form N type layers E1, E2, N. Then, a window is opened at an SiO2 film 6, Schottky electrode metal 7 of molybdenum is deposited, a hole of wire electrode is then opened, and aluminum wires E, B, C, S are formed. The Schottky barrier diode is formed by the contact of the N type region and the Schottky barrier metal 5, and is inserted between the base and the emitter of the transistor of the front stage of the Darlington transistor. In this manner, the structure can be simplified, thereby improving the switching characteristic. |
