| 摘要 |
PURPOSE:To prevent deformation and breakage of wirings and the like on a semiconductor chip which is incorporated in a resin package due to stress caused by thermal expansion and shrinkage of the raw material resin of the package accompanied by the temperature cycle of low temperatures and high temperatures. CONSTITUTION:A metallic wiring layer 8 is formed on an insulating film 7 on a semiconductor substrate 6. A protective insulating film 9 is formed to protect said layer 8. The thickness of said protective insulating film 9 is thick. Then it is etched to obtained a thin thickness, and the layer is formed again. Or polyimide resin is applied. In such a method, the surface of the film 9 is smoothed so as not to have convenx and concave parts. A buffer insulating film 10 comprising polyimide having a thermal expansion coefficient of 150-450X10<-7>/ deg.C is provided thereon. Therefore, in the semiconductor chip while is sealed by the package resin 5, the stress caused by the thermal expansion and shrinkage of the resin 5 is eased, and the deformation and breakage of the metallic wirings due to said stress is prevented. |
