| 摘要 |
PURPOSE:To prevent a soft error generated in a memory unit without increasing the power consumption remarkably, by controlling the supply voltage of the memory unit by a signal from a radiant ray detecting unit. CONSTITUTION:This device is provided with a radiant ray detecting unit 15 for detecting a radiant ray which is made incident to a memory unit 11, so that supply voltage Vcc of the memory unit 11 is controlled by a radiant ray detecting signal TSG from this detecting unit 15. For instance, the radiant ray detecting unit 15 whose response speed is high, for detecting a thermal neutron NTN which is made incident to the memory unit 11 is placed so as to surround a part or the whole of the memory unit 11. In this state, an electric power supply unit 14 is controlled by a trigger signal TSG from this detecting unit 15, and supply voltage Vcc is held temporarily at a higher value than usual, only in the period in which an electron generated as a result of the fact that the thermal neutron NTN has been made incident to a memory chip is decreased to the extent of generating no soft error. |
