| 摘要 |
PURPOSE:To detect a defect of the semiconductor element easily and rapidly by etching a defect detecting section of the surface of the element by a CrO3-HF group, coloring the etching surface by a HF-HNO3 group and detecting the defective section through the difference of the colors of the surface of the detecting section. CONSTITUTION:With an emitter in which there is a short between a collector and the emitter, etching is slow, and it is convex as compared to a normal emitter. On the other hand, when etching by the CrO3-HF group is conducted up to a base region, the normal emitter is already etched up to the base region, but the emitter still remains in the emitter in which there is a short between the collector and the emitter. When such an element is colored by the HF-HNO3 group, the white n<+> emitter region 5 appears in the light brown p type region. The difference of the colors is discriminated by means of a microscope, and the defective section is detected. Accordingly, the defect can easily be detected rapidly, and the yield of the device is improved. |
