| 摘要 |
PURPOSE:To prevent dispersion in access time at readout, by turning off a P(N) channel MOS transistor (TR) at the application of gate write-in signal and turning on it at non-write-in. CONSTITUTION:Load elements 17,18 are P channel MOSFETs, the gate voltage is at ground potential at readout to be turned on. Thus, 17,18 are biased to unsaturated region normally, act like mere resistors, resulting that the dispersion in the threshold voltage can not give any effect on a common data line potential. At write-in, the MOS TRs17,18 turn off through the application of write-in signal to a terminal 44 to cut off the current flowing from Vcc. Thus, a line to be at low level out of common data lines 110,111 is easily at a low potential. Thus, the dispersion in the access time can be avoided. |
