| 发明名称 |
METHOD OF FORMING REFRACTORY METALLIC SILICIDE OF LOW RESISTANCE ON SUBSTRATE |
| 摘要 |
A method of forming low resistance silicided gates or interconnects is described wherein a refractory metal and silicon is simultaneously co-deposited to form a composite layer which is thereafter heat treated in a non-oxidizing atmosphere to form the polycrystalline state of the silicide. |
| 申请公布号 |
JPS57136373(A) |
申请公布日期 |
1982.08.23 |
| 申请号 |
JP19820002184 |
申请日期 |
1982.01.08 |
| 申请人 |
RCA CORP |
发明人 |
JIYOSEFU MAIKERU SHIYAU |
| 分类号 |
H01L29/78;H01L21/28;H01L21/285;H01L21/3205;H01L23/52 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
