Semiconductor Fin FET device with epitaxial source/drain

摘要

In a method of fabricating a Fin FET, first and second fin structures are formed. The first and second fin structures protrude from an isolation insulating layer. A gate structure is formed over the first and second fin structures, each of which has source/drain regions, having a first width, outside of the gate structure. Portions of sidewalls of the source/drain regions are removed to form trimmed source/drain regions, each of which has a second width smaller than the first width. A strain material is formed over the trimmed source/drain regions such that the strain material formed on the first fin structure is separated from that on the second fin structure. An interlayer dielectric layer is formed over the gate structure and the source/drain regions with the strain material. A contact layer is formed on the strain material such that the contact layer wraps around the strain material.

主权项

1. A method of fabricating a fin field-effect transistor (Fin FET) device, the method comprising:
providing a first fin structure and a second fin structure over a substrate, the first and second fin structures protruding from an isolation insulating layer disposed over the substrate; forming a gate structure over the first fin structure and the second fin structure, each of the first fin structure and the second fin structure having a channel region beneath the gate structure and source/drain regions outside of the gate structure, the source/drain regions having a first width; removing portions of sidewalls of the source/drain regions in the first fin structure and the second fin structure to form trimmed source/drain regions, each of the trimmed source/drain regions having a second width smaller than the first width; forming a strain material over the trimmed source/drain regions of the first fin structure and the second fin structure, the strain material being formed such that the strain material formed on the first fin structure is separated from the strain material formed on the second fin structure; forming an interlayer dielectric layer over the gate structure and the source/drain regions with the strain material; and forming a contact layer on the strain material formed on the source/drain regions of the first fin structure and the second fin structure such that the contact layer wraps around the strain material on the source/drain regions.