Methods to utilize merged spacers for use in fin generation in tapered IC devices

摘要

Methods for processes to form and use merged spacers in fin generation and the resulting devices are disclosed. Embodiments include providing first and second mandrels separated from each other across adjacent cells on a Si layer; forming first and second dummy-spacers and third and fourth dummy-spacers on opposite sides of the first and second mandrels, respectively; removing, through a block-mask, the first and fourth dummy spacers and a portion of the second and third dummy-spacers; forming first spacers on each exposed side of the mandrels and in between the second and third dummy-spacers, forming a merged spacer; removing the mandrels; removing a section of the merged-spacer; forming second spacers on all exposed sides of the first spacers and the merged-spacer; removing the merged-spacer and the first spacers; removing exposed sections of the Si layer through the second spacers; and removing the second spacers to reveal Si fins.

主权项

1. A method comprising:
providing first and second mandrels separated from each other across adjacent cells on an upper surface of a silicon (Si) layer; forming first and second dummy spacers and third and fourth dummy spacers on opposite sides of the first and second mandrels, respectively; removing, through a block mask, the first and fourth dummy spacers and a portion of the second and third dummy spacers; forming first spacers on each exposed side of the first and second mandrels and in between the second and third dummy spacers, forming a merged spacer; removing the mandrels; removing a section of the merged spacer; forming second spacers on all exposed sides of the first spacers and the merged spacer; removing the merged spacer and the first spacers; removing exposed sections of the Si layer through the second spacers; and removing the second spacers to reveal Si fins.