| 摘要 |
PURPOSE:To increase adhesive strength, and to enable heat treatment at a low temperature by evaporating Ni on the surface of a Si substrate to which a P-N junction is formed, shaping a Ni silicide layer at a low temperature and forming Ni and Au plating layers onto the silicide layer. CONSTITUTION:Ni is evaporated on the surface of the mirror-surface Si semiconductor substrate 1 to which the predetermined P-N junction is molded previously. The substrate 1 is heated at 440-550 deg.C in N2 or N2 and H2 gas atrmosphere, and the Ni silicide layer 2 is formed. Ni is removed, and the Ni plating layer 3 and the Au plating layer 4 are shaped. When the electrode metal is formed and temperature compensating plate made of Mo, etc. is soldered, the Ni of the layer 3 is sintered into the layer 2 when the temperature of heating is made 440- 550 deg.C, and the adhesive strength is increased as compared to the case when the temperature is made 440 deg.C or lower. |
