发明名称 ETCHING METHOD FOR SI SEMICONDUCTOR DEVICE
摘要 PURPOSE:To improve the working efficiency of etching, and to ameliorate the yield by sealing the main surface of a Si wafer through the combination of an elastic material and a film, and etching the main surface. CONSTITUTION:The elastic material 11 is laid on a jig 1, the thin film 12 is placed on the material, and the Si wafer 3 is placed. The film 13 punched in a domed shape is placed onto the wafer 3 and the flat elastic material 14 with the same shape as the film 13 is placed on the film 13. These films, materials and wafer are sealed by the jig 1, and the wafer is etched. Accordingly, an etching liquid, degrades yield, does not intrude to the main surface, the closely adhesive property of the jig with the wafer 3 is excellent under the influence of the films 12, 13, and the wafer 3 can be extracted without damaging it.
申请公布号 JPS57154837(A) 申请公布日期 1982.09.24
申请号 JP19810039365 申请日期 1981.03.20
申请人 HITACHI SEISAKUSHO KK 发明人 KAGAMI TERUYUKI;MIYAKE HIRAKAZU;KANZAWA RIYOUSAKU;YATSUNO KOUMEI
分类号 H01L21/306;C23F1/08 主分类号 H01L21/306
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