| 摘要 |
PURPOSE:To obtain a circuit device with an excellent characteristic and high integration by a method wherein a polycrystalline Si using MOSFET is provided with a gate electrode on its top and bottom surfaces. CONSTITUTION:A p type Si substrate 1 is provided with n<+> layers 21 and 22 covered with an SiO2 film 3, then is covered with selectively, successively formed polycrystalline Si island 41 and 42. The island 41 (for enhancement type device Q1) is implanted with B ions while the island 42 (for depletion type device Q2) is implanted with As ions. Polycrystalline Si layers 61 and 62 are placed on thermally oxidized films 51 and 52. Next, sources 71 and 72 and drains 81 and 82 are built by As doping, which are in turn covered by an insulator film 9. Providing of a wiring 10 completes an E/D type MOS inverter. The driver Q1 gates are made in a common connection into a signal input end and the load Q2 gate is made in a common connection with the Q1 drain and Q2 source into a signal output end. In an inverter of this structure, the output voltage delay behind the input is extremely small in length and the output wave contains few spikes, which result in an excellent switching characteristic and high integration. |
