| 摘要 |
PURPOSE:To improve reliability by using CO2 as an oxidizing gas when plasma is generated in a reaction gas containing silicon hydride and the oxidizing gas and an insulating film consisting of glass containing Si and O is formed. CONSTITUTION:A lower electrode 3 made of Al and a discoid upper electrode 4 made of stainless steel opposed to the electrode 3 are mounted into a bell jar 1 for a CVD device for plasma deposition. A reaction gas system consists of PH3- SiH4-CO2-Ar. PH3 and SiH4 are introduced from the lower section of the electrode 3 while using Ar as a diluting gas. CO2, on the other hand, is introduced from the bottom of the bell jar 1, and supplied to a reaction chamber 7 through the through-holes 5 of the electrode 3. A semiconductor wafer 6 is set while the upper section of the surface is downward directed on the electrode 4. The reaction gas is plasma-excited in the reaction chamber 7, and the insulating film is deposited onto the wafer 6. |
