| 摘要 |
PURPOSE:To enhance the light emitting efficiency and the reproducibility of a visible light emitting semiconductor device by reducing the carrier density of a p type layer lower than that of an n type layer when forming the device by alternately epitaxially growing an n type GaAlAs layer and a p type GaAlAs layer of Zn impurity on a crystalline substrate. CONSTITUTION:An n<+> type GaAlAs layer 12 doped with Te in high density is epitaxially grown on an n-type GaAlAs substrate 11, and a p<-> type GaAlAs layer 13 doped with Zn of low density is epitaxially grown on the layer 12 and is epitaxially grown. In this structure, the carrier desity of the layer 12 is set to 9X10<17>cm<-3>, and the carrier density of the layer 13 is set to 1-2X10<17>cm<-3>. In this manner, the difference between the p type carrier density and the n type carrier density is sufficiently increased in the vicinity of the p-n junction, thereby obtaining high light emitting efficiency. |
